SELF-HEATING EFFECTS IN SILICON NANOSCALE MOSFET(A MULTISCALE MODELING APPROACH)
نویسندگان
چکیده
منابع مشابه
A Review Report on Ballistic Transport and Self Heating Effect (SHE) in Nanoscale Strained –Silicon MOSFETS
As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors QuasiBallistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem...
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ژورنال
عنوان ژورنال: Journal of Electrical Engineering and Information Technologies
سال: 2018
ISSN: 2545-4250,2545-4269
DOI: 10.51466/jeeit1831-2031r